Electrical and mechanical properties of low temperature evaporated silicon dioxide/polyimide dual-layer insulator for plastic-based polymer transistor

Thin Solid Films

Volumn 429, Issue 1-2, 2003, Pages 231-237

  Park, Sung Kyu ^a   Kim, Yong Hoon ^a   Han, Jeong In ^a   Moon, Dae Gyu ^a   Kim, Won Keun ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

Insulator; Polyimide; Polymer; Silicon dioxide; Transistor

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; EVAPORATION; PLASTIC FILMS; POLYIMIDES; SILICA;

DUAL-LAYER INSULATORS;

THIN FILM TRANSISTORS;

EID: 0037960187     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00407-3     Document Type: Article

References (17)

1. Schon J.H., Berg S., Kloc Ch, Batlogg B. Science. 287:2000;1022.
2. Klauk H., Gundlach D.J., Nichols J.A., Jackson T.N. IEEE Trans. Electron. Devices. 46:1999;1258.
3. Deshmukh S.C., Aydil E.S. Appl. Phys. Lett. 65:1994;3185.
4. Jelenkovic E.V., Tong K.Y. Appl. Phys. Lett. 67:1995;2693.
5. Suo Z., Ma E.Y., Gleskova H., Wagner S. Appl. Phys. Lett. 74:1999;1177.
6. Cairns D.R., Witte R.P. II, Sparacin D.K., Sachsman S.M. Appl. Phys. Lett. 76:2000;1425.
7. Park S.K., Kim Y.H., Han J.I., Moon D.G., Kim W.K. IEEE Trans. Electron. Devices. 49:2002;1208.
8. Park S.K., Han J.I., Kim W.K., Kwak M.G. Thin Solid Films. 397:2001;49.
9. Park S.K., Han J.I., Kim W.K., Kwak M.G. Proc. Mat. Res. Soc. 605:2002;126.
10. Gao D.W., Kashiwazaki Y., Muraoka K. J. Appl. Phys. 82:1997;5680.
11. Xueping X., Goodman D.W. Appl. Phys. Lett. 61:1992;774.
12. Sekine K., Saito Y., Hirayama M., Ohmi T. IEEE Trans. Electron. Devices. 48:2001;1550.
13. Dumin D.J., Mopuri S.K., Vanchinathan S., Scott R.S., Lewis T.G. IEEE Trans. Electron. Devices. 42:1995;760.
14. Sessier G.M., Hahn B., Yoon D.Y. J. Appl. Phys. 60:1985;318.
15. Hook T.B. IEEE Trans. Electron. Devices. 37:1990;1714.
16. Neuhaus H.J., Day D.R., Senturia S.D. J. Electron. Mat. 14:1985;379.
17. Smith F., Neuhaus H.J., Senturia S.D., Feit Z., Day D.R., Lewis T. J. Electron. Mat. 16:1987;379.