Limits of performance gain of aligned CNT over randomized network: Theoretical predictions and experimental validation

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 593-595

  Pimparkar, Ninad ^a   Kocabas, Coskun ^b   Kang, Seong Jun ^c   Rogers, John ^b,c   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Aligned carbon nanotube (CNT) networks; Percolation threshold; Random CNT networks; Stick percolation; Thin film transistors (TFTs); Transistor models

Indexed keywords

ALIGNED CARBON NANOTUBE (CNT) NETWORKS; NANOBUNDLE THIN-FILM TRANSISTORS (NB-TFTS); PERCOLATION THRESHOLD; STICK-PERCOLATION MODEL; TRANSISTOR MODELS;

DRAIN CURRENT; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILM TRANSISTORS;

CARBON NANOTUBES;

EID: 34447276692     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.898256     Document Type: Article

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