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Volumn 95, Issue 16, 2009, Pages

Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

(6) Wang, Q a Gong, Y P a Zhang, J F a,b Bai, J a Ranalli, F a Wang, T a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b XIDIAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN BUFFER; CRYSTAL QUALITIES; DEEP UV; ELECTRICAL INJECTION; HIGH RESOLUTION X RAY DIFFRACTION; HIGH TEMPERATURE; LOW THRESHOLDS; MULTIPLE QUANTUM WELLS; MULTIPLE QUANTUM-WELL STRUCTURES; ROOM TEMPERATURE; ULTRAVIOLET LASER;

CORUNDUM; GALLIUM NITRIDE; LIGHT; OPTICAL PUMPING; QUANTUM WELL LASERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; STIMULATED EMISSION; SUPERCONDUCTING FILMS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70350408768 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3253416 Document Type: Article

Times cited : (19)

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