Characteristics of nitrogen-doped p-ZnO thin films and ZnO/ZnSe p-n heterojunctions grown on a ZnSe substrate

Semiconductor Science and Technology

Volumn 23, Issue 8, 2008, Pages 085008-

  Rogozin, I V ^a   Kotlyarevsky, M B ^b  

^a BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b Academy of Management and Technology   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; DOPING (ADDITIVES); EPITAXIAL GROWTH; MASS SPECTROMETRY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; NITROGEN; NONMETALS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; THICK FILMS; ZINC ALLOYS; ZINC OXIDE;

C -AXIS; GETTERING; N-DOPED; NITROGEN DOPANT; NITROGEN-DOPED; OXYGEN SOURCES; P-N HETEROJUNCTIONS; P-TYPE DOPING; SECONDARY ION MASS SPECTROSCOPY; X-RAY DIFFRACTION; ZNO FILMS; ZNO THIN FILMS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 51849131947     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/8/085008     Document Type: Article

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