Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

Materials Research Bulletin

Volumn 43, Issue 3, 2008, Pages 502-509

  Sahoo, Trilochan ^a   Ju, Jin Woo ^a   Kannan, V ^a   Kim, Jin Soo ^a   Yu, Yeon Tae ^a   Han, Myung Soo ^b   Park, Young Sik ^b   Lee, In Hwan ^a  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

A. Optical materials; B. Chemical synthesis; B. Epitaxial growth; C. Electron micrpscopy; D. Luminescence

Indexed keywords

ELECTRON MICROSCOPES; EPITAXIAL GROWTH; LUMINESCENCE; OPTICAL MATERIALS; SAPPHIRE;

CHEMICAL SYNTHESIS; ELECTRON MICRPSCOPY; WURTZITE SYMMETRY; ZINC ACETATE;

ZINC OXIDE;

EID: 38649112284     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2007.11.015     Document Type: Article

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