메뉴 건너뛰기




Volumn 1, Issue 1-2, 2008, Pages 147-150

Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Author keywords

metalorganic chemical vapor deposition (MOCVD); p type ZnO; phosphorus doping

Indexed keywords


EID: 79955626784     PISSN: 16744128     EISSN: 16744594     Source Type: Journal    
DOI: 10.1007/s12200-008-0024-2     Document Type: Article
Times cited : (4)

References (21)
  • 2
    • 0032621147 scopus 로고    scopus 로고
    • ZnO quantum particle thin films fabricated by electrophoretic deposition
    • Wong E C, Searon P C. ZnO quantum particle thin films fabricated by electrophoretic deposition. Applied Physics Letters, 1999, 74(20): 2939-2941.
    • (1999) Applied Physics Letters , vol.74 , Issue.20 , pp. 2939-2941
    • Wong, E.C.1    Searon, P.C.2
  • 3
    • 0001649616 scopus 로고    scopus 로고
    • First-principles study of native point defects in ZnO
    • Kohan A F, Ceder G, Morgan D, et al. First-principles study of native point defects in ZnO. Physical Review B, 2000, 61(22): 15019-15027.
    • (2000) Physical Review B , vol.61 , Issue.22 , pp. 15019-15027
    • Kohan, A.F.1    Ceder, G.2    Morgan, D.3
  • 6
    • 8644222175 scopus 로고    scopus 로고
    • P-type conduction in N-Al codoped ZnO thin films
    • Lu J G, Ye Z Z, Zhuge F, et al. P-type conduction in N-Al codoped ZnO thin films. Applied Physics Letters, 2004, 85(15): 3134-3135.
    • (2004) Applied Physics Letters , vol.85 , Issue.15 , pp. 3134-3135
    • Lu, J.G.1    Ye, Z.Z.2    Zhuge, F.3
  • 7
    • 14844349133 scopus 로고    scopus 로고
    • MOCVD growth of p-type ZnO thin films by using NO as the dopant source
    • Xu W Z, Ye Z Z, Zhou T, et al. MOCVD growth of p-type ZnO thin films by using NO as the dopant source. Chinese Journal of Semiconductors, 2005, 26(1): 38-41 (in chinense).
    • (2005) Chinese Journal of Semiconductors , vol.26 , Issue.1 , pp. 38-41
    • Xu, W.Z.1    Ye, Z.Z.2    Zhou, T.3
  • 8
    • 0033225419 scopus 로고    scopus 로고
    • P-type electrical conduction in ZnO thin films by Ga and N codoping
    • Joseph M, Tabata H, Kawai T. P-type electrical conduction in ZnO thin films by Ga and N codoping. Japanese Journal of Applied Physics, 1999, 38(11): L1205-L1207.
    • (1999) Japanese Journal of Applied Physics , vol.38 , Issue.11
    • Joseph, M.1    Tabata, H.2    Kawai, T.3
  • 9
    • 79958230334 scopus 로고    scopus 로고
    • Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
    • Look D C, Reynolds D C, Litton C W, et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy. Applied Physics Letters, 2002, 81(10): 1830-1832.
    • (2002) Applied Physics Letters , vol.81 , Issue.10 , pp. 1830-1832
    • Look, D.C.1    Reynolds, D.C.2    Litton, C.W.3
  • 11
    • 17944381476 scopus 로고    scopus 로고
    • On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide
    • 112112
    • Barnes T M, Olson K, Wolden C A. On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide. Applied Physics Letters, 2005, 86(11): 112112.
    • (2005) Applied Physics Letters , vol.86 , Issue.11
    • Barnes, T.M.1    Olson, K.2    Wolden, C.A.3
  • 12
    • 0001026156 scopus 로고    scopus 로고
    • ZnO diode fabricated by excimer-laser doping
    • Aoki T, Hatanaka Y, Look D C. ZnO diode fabricated by excimer-laser doping. Applied Physics Letters, 2000, 76(22): 3257-3258.
    • (2000) Applied Physics Letters , vol.76 , Issue.22 , pp. 3257-3258
    • Aoki, T.1    Hatanaka, Y.2    Look, D.C.3
  • 13
    • 0042842376 scopus 로고    scopus 로고
    • Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
    • Kim K K, Kim H S, Hwang D K, et al. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant. Applied Physics Letters, 2003, 83(1): 63-65.
    • (2003) Applied Physics Letters , vol.83 , Issue.1 , pp. 63-65
    • Kim, K.K.1    Kim, H.S.2    Hwang, D.K.3
  • 14
    • 0037445975 scopus 로고    scopus 로고
    • Formation of p-type ZnO film on InP substrate by phosphor doping
    • Bang K H, Hwang D K, Park M C, et al. Formation of p-type ZnO film on InP substrate by phosphor doping. Applied Surface Science, 2003, 210(3): 177-182.
    • (2003) Applied Surface Science , vol.210 , Issue.3 , pp. 177-182
    • Bang, K.H.1    Hwang, D.K.2    Park, M.C.3
  • 15
    • 0042842374 scopus 로고    scopus 로고
    • Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition
    • Ryu Y R, Lee T S, White H W. Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition. Applied Physics Letters, 2003, 83(1): 87-89.
    • (2003) Applied Physics Letters , vol.83 , Issue.1 , pp. 87-89
    • Ryu, Y.R.1    Lee, T.S.2    White, H.W.3
  • 16
    • 0036002001 scopus 로고    scopus 로고
    • P-type ZnO layer formation by excimer laser doping
    • Aoki T, Shimizu Y, Miyake A, et al. P-type ZnO layer formation by excimer laser doping. Physica Status Solidi B, 2002, 229(2): 911-914.
    • (2002) Physica Status Solidi B , vol.229 , Issue.2 , pp. 911-914
    • Aoki, T.1    Shimizu, Y.2    Miyake, A.3
  • 17
    • 0005762811 scopus 로고    scopus 로고
    • Highly oriented ZnO thin films deposited on Ru/Si substrates
    • Lim W T, Lee C H. Highly oriented ZnO thin films deposited on Ru/Si substrates. Thin Solid Films, 1999, 353(1-2): 12-15.
    • (1999) Thin Solid Films , vol.353 , Issue.1-2 , pp. 12-15
    • Lim, W.T.1    Lee, C.H.2
  • 18
    • 0742319103 scopus 로고    scopus 로고
    • Influence of postdeposition annealing on crystallinity of zinc oxide films
    • Lu J G, Ye Z Z, Huang J Y, et al. Influence of postdeposition annealing on crystallinity of zinc oxide films. Chinese Journal of Semiconductors, 2003, 24(7): 729-736 (in Chinese).
    • (2003) Chinese Journal of Semiconductors , vol.24 , Issue.7 , pp. 729-736
    • Lu, J.G.1    Ye, Z.Z.2    Huang, J.Y.3
  • 19
    • 0037104275 scopus 로고    scopus 로고
    • Origin of p-type doping difficulty in ZnO: the impurity perspective
    • 073202
    • Park C H, Zhang S B, Wei S H. Origin of p-type doping difficulty in ZnO: the impurity perspective. Physical Review B, 2002, 66(7): 073202.
    • (2002) Physical Review B , vol.66 , Issue.7
    • Park, C.H.1    Zhang, S.B.2    Wei, S.H.3
  • 20
    • 2542438239 scopus 로고    scopus 로고
    • Doping by largesize-mismatched impurities: the microscopic origin of arsenic-or antimony doped p-type zinc oxide
    • 155504
    • Limpijumnong S, Zhang S B, Wei S H, et al. Doping by largesize-mismatched impurities: the microscopic origin of arsenic-or antimony doped p-type zinc oxide. Physical Review Letters, 2004, 92(15): 155504.
    • (2004) Physical Review Letters , vol.92 , Issue.15
    • Limpijumnong, S.1    Zhang, S.B.2    Wei, S.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.