MOCVD growth of p-type ZnO thin films by using NO as dopant source

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 1, 2005, Pages 38-41

  Xu, Weizhong ^a   Ye, Zhizhen ^a   Zhou, Ting ^a   Zhao, Binghui ^a   Zhu, Liping ^a   Huang, Jingyun ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Metal organic chemical vapor deposition; p type; ZnO

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; NITROGEN OXIDES; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); NITROGEN DOPING; P TYPE ZNO THIN FILM;

SEMICONDUCTING FILMS;

EID: 14844349133     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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