Surface potential investigation of carbon nanotube field-effect transistor by point-by-point atomic force microscope potentiometry

Japanese Journal of Applied Physics

Volumn 49, Issue 2 PART 2, 2010, Pages

  Miyato, Yuji ^a   Kobayashi, Kei ^a   Matsushige, Kazumi ^a   Yamada, Hirofumi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; ATOMIC FORCE MICROSCOPES; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CONTACT METHODS; FIELD-EFFECT; GATE VOLTAGES; LOCAL VARIATIONS; POTENTIAL BARRIER HEIGHT; POTENTIOMETRY; SCHOTTKY BARRIERS; SOURCE CONTACT;

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOSENSORS; POTENTIOMETERS (ELECTRIC MEASURING INSTRUMENTS); SCHOTTKY BARRIER DIODES; SURFACE POTENTIAL;

SURFACE PROPERTIES;

EID: 79955544744     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.02BD03     Document Type: Article

References (18)

1. J. Appenzeller, R. Martel, V. Derycke, M. Radosavljevi, S. Wind, D. Neumayer, and Ph. Avouris: Microelectron. Eng. 64 (2002) 391.
2. Ph. Avouris, Z. Chen, and V. Perebeinos: Nat. Nanotechnol. 2 (2007) 605.
3. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris: Phys. Rev. Lett. 89 (2002) 106801.
4. Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani: Nanotechnology 17 (2006) 3412.
5. A. Bachtold, M. S. Fuhrer, S. Plyasunov, M. Forero, E. H. Anderson, A. Zettl, and P. L. McEuen: Phys. Rev. Lett. 84 (2000) 6082.
6. Y. Yaish, J.-Y. Park, S. Rosenblatt, V. Sazonova, M. Brink, and P. L. McEuen: Phys. Rev. Lett. 92 (2004) 046401.
7. M. Nonnenmacher, M. P. O'Boyle, and H. K. Wickramasinghe: Appl. Phys. Lett. 58 (1991) 2921.
8. Y. Miyato, K. Kobayashi, K. Matsushige, and H. Yamada: Jpn. J. Appl. Phys. 44 (2005) 1633.
9. T. Uchihashi, Y. Fukano, Y. Sugawara, S. Morita, A. Nakano, T. Ida, and T. Okada: Jpn. J. Appl. Phys. 33 (1994) L1562.
10. M. C. Hersam, A. C. F. Hoole, S. J. O'Shea, and M. E. Welland: Appl. Phys. Lett. 72 (1998) 915.
11. M. Nakamura, N. Goto, N. Ohashi, M. Sakai, and K. Kudo: Appl. Phys. Lett. 86 (2005) 122112.
12. Y. Miyato, K. Kobayashi, K. Matsushige, and H. Yamada: Nanotechnology 18 (2007) 084008.
13. T. R. Albrecht, P. Grütter, D. Horne, and D. Rugar: J. Appl. Phys. 69 (1991) 668.
14. B. Anczykowski, J. P. Cleveland, D. Kruger, V. Elings, and H. Fuchs: Appl. Phys. A 66 (1998) 885.
15. T. Nishio, Y. Miyato, K. Kobayashi, K. Matsushige, and H. Yamada: Appl. Phys. Lett. 92 (2008) 063117.
16. X. Q. Chen, T. Saito, H. Yamada, and K. Matsushige: Appl. Phys. Lett. 78 (2001) 3714.
17. S. Blatt, F. Hennrich, H. Löhneysen, M. M. Kappes, A. Vijayaraghavan, and R. Krupke: Nano Lett. 7 (2007) 1960.
18. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris: Phys. Rev. Lett. 89 (2002) 126801.