Al-induced low-temperature crystallization of Si1 - xGex (0 < x < 1) by controlling layer exchange process

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Kurosawa, Masashi ^a   Sadoh, Taizoh ^a   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Al induced crystallization; SiGe; System in display; Thin film solar cell

Indexed keywords

AL OXIDE; GE FRACTION; HIGH EFFICIENCY; INDUCED CRYSTALLIZATION; INSULATING FILM; LARGE-GRAIN; LAYER EXCHANGE; LOW TEMPERATURES; LOW-TEMPERATURE CRYSTALLIZATION; OXIDE LAYER THICKNESS; POLY-SIGE; STACKED STRUCTURE; THIN-FILM SOLAR CELLS;

CRYSTALLIZATION; GERMANIUM; GRAIN BOUNDARIES; INSULATION; POLYSILICON; PROCESS CONTROL; SILICON ALLOYS; SOLAR CELLS; THIN FILM DEVICES;

ALUMINUM;

EID: 73649129223     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.082     Document Type: Article

References (22)

1. Yamaguchi S., Sugii N., Park S.K., Nakagawa K., and Miyao M. J. Appl. Phys. 89 (2001) 2091
2. Miyao M., Moniwa M., Kusukawa K., and Sinke W. J. Appl. Phys. 64 (1988) 3018
3. Olivares J., Rodriguez A., Sangrador J., Rodriguez T., Ballesteros C., and Kling A. Thin Solid Films 337 (1999) 51
4. Miyao M., Sadoh T., Yamaguchi S., and Park S.K. Proc. Asia-Pacific Workshop Fundamental and Application of Advanced Semiconductor Devices (2001) 115
5. Watakabe H., Sameshima T., Kanno H., Sadoh T., and Miyao M. J. Appl. Phys. 95 (2004) 6457
6. Kim J.H., and Lee J.Y. Jpn. J. Appl. Phys. 35 (1996) 2052
7. Lee S.W., Jeon Y.C., and Joo S.K. Appl. Phys. Lett. 66 (1995) 1671
8. Bian B., Yie J., Li B., and Wu Z. J. Appl. Phys. 73 (1993) 7402
9. Hayzelden C., and Batstone J.L. J. Appl. Phys. 73 (1993) 8279
10. Jin Z., Bhat G.A., Yeung M., Kwok H.S., and Wong M. J. Appl. Phys. 84 (1998) 194
11. Miyasaka M., Makihira K., Asano T., Polychroniadis E., and Stoemenos J. Appl. Phys. Lett. 80 (2002) 944
12. Kanno H., Kenjo A., Sadoh T., and Miyao M. Jpn. J. Appl. Phys. 45 (2006) 4351
13. Sadoh T., Toko K., Kanno H., Masumori S., Itakura M., Kuwano N., and Miyao M. Jpn. J. Appl. Phys. 47 (2008) 1876
14. Aberle A.G., Harder N.-P., and Oelting S. J. Cryst. Growth 226 (2001) 209
15. Sugimoto Y., Tanaka N., Hirota T., Ikeda K., Yoshida F., Nakashima H., and Nakashima H. Jpn. J. Appl. Phys. 44 (2005) 4770
16. Kim H., Kim D., Lee G., Kim D., and Lee S.H. Sol. Energy Mater. Sol. Cells 74 (2002) 323
17. Rau B., Sieber I., Schneider J., Muske M., Stöger-Pollach M., Schattschneider P., Gall S., and Fuhs W. J. Cryst. Growth 270 (2004) 396
18. Nast O., and Hartmann A.J. J. Appl. Phys. 88 (2000) 124
19. Gall S., Muske M., Sieber I., Nast O., and Fuhs W. J. Non-Cryst. Solids 299-302 (2002) 741
20. Gjukic M., Buschbeck M., Lechner R., and Stutzmann M. Appl. Phys. Lett. 85 (2004) 2134
21. Lechner R., Buschbeck M., Gjukic M., and Stutzmann M. Phys. Status Solidi C 1 (2004) 1131
22. Kurosawa M., Tsumura Y., Sadoh T., and Miyao M. Proc. 4th Int. TFT Conf. (2008) 193