Recent progress of heterostructure technologies for novel silicon devices

Applied Surface Science

Volumn 102, Issue , 1996, Pages 360-371

  Miyao, Masanobu ^a   Nakagawa, Kiyokazu ^a   Nakahara, Hitoshi ^a   Kiyota, Yukihiro ^a   Kondo, Masao ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

BAND ENGINEERING TECHNOLOGY; QUANTUM FUNCTIONAL DEVICES; ULTRASHALLOW POSITIVE NEGATIVE JUNCTIONS;

HETEROJUNCTIONS;

EID: 0030564803     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00079-7     Document Type: Article

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