Method for detecting defects in silicon-on-insulator using capacitance transient spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2402-2408

  Nakashima, Hiroshi ^a   Wang, Dong ^a   Noguchi, Takashi ^a   Itani, Kousuke ^a   Wang, Junli ^a   Zhao, Liwei ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Deep level transient spectroscopy; Fe impurity; Interface states; SOI

Indexed keywords

ANNEALING; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; MOS DEVICES; PROBLEM SOLVING; SIGNAL PROCESSING; X RAYS;

ENERGY DISTRIBUTION; FE IMPURITY; INTERFACE STATES; SILICON-ON-INSULATOR (SOI);

SILICON;

EID: 3142776507     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2402     Document Type: Article

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