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Volumn 3, Issue 7, 2010, Pages

Passivation of electrically active defects in Ge-Rich SiGe-on-insulator by Al2O3 deposition and subsequent post-deposition annealing

(5) Yang, Haigui a Iyota, Masatoshi a Ikeura, Shogo a Wang, Dong a Nakashima, Hiroshi a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; ELECTRICAL CHARACTERISTIC; ELECTRICALLY ACTIVE DEFECTS; GE CONDENSATION; ORDER OF MAGNITUDE; POST DEPOSITION ANNEALING; SIGE ON INSULATOR; SIGE-ON-INSULATOR SUBSTRATES;

DEFECTS; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLE CONCENTRATION; MOSFET DEVICES; PASSIVATION; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ALLOYS; SURFACE REACTIONS;

ALUMINUM;

EID: 77954531958 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.071302 Document Type: Article

Times cited : (4)

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