Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors

Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

  Li, Changsheng ^a   Bescond, Marc ^a   Lannoo, Michel ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PARAMETER VARIATIONS; ELECTRON SELF-ENERGY; GATE OXIDE; GATE-ALL-AROUND; GENERAL APPROACH; GW APPROXIMATION; INTERFACE DYNAMIC; NANOSCALE SEMICONDUCTOR DEVICES; NANOWIRE TRANSISTORS; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SLOPE;

ELECTRIC WIRE; GATES (TRANSISTOR); NANOWIRES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

TRANSISTORS;

EID: 78650746671     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3526739     Document Type: Article

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