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Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

Surfactant effect of arsenic doping on modification of ZnO (0001) growth kinetics

(7) Ye, J D a Tan, S T a Pannirselvam, S a Choy, S F a Sun, X W b Lo, G Q a Teo, K L c,d

a INSTITUTE OF MICROELECTRONICS (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c DATA STORAGE INSTITUTE (Singapore)

d NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DOPING; GROWTH FRONT; GROWTH SURFACES; LATERAL EXPANSION; LATTICE DISTORTIONS; LAYER-BY-LAYER GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; OXYGEN ADATOMS; STEP BUNCHING; SURFACE CONDITIONS; SURFACTANT EFFECTS; TOTAL SURFACE ENERGY; TWO-DIMENSIONAL GROWTH; ZNO;

ARSENIC; BIOACTIVITY; EPITAXIAL GROWTH; LANDFORMS; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; SOIL CONSERVATION; SURFACE ACTIVE AGENTS; SURFACE CHEMISTRY; SURFACE DIFFUSION; SURFACE TENSION; TWO DIMENSIONAL; ZINC; ZINC OXIDE;

GROWTH KINETICS;

EID: 70249094617 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3226105 Document Type: Article

Times cited : (22)

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