Hall effect studies of donors and acceptors in different types of bulk ZnO modified by annealing and hydrogen implantation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 2, 2008, Pages 569-572

  Kassier, G H ^a   Hayes, M ^a   Auret, F D ^a   Diale, M ^a   Svensson, B G ^a,b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ANNEALING TEMPERATURES; CHEMICAL VAPOUR TRANSPORT; EXTRINSIC DEFECTS; HYDROGEN IMPLANTATION; MELT-GROWN; SURFACE CONDUCTION; TEMPERATURE DEPENDENT; THEORETICAL PREDICTION; ZNO; ZNO LAYERS;

ANNEALING; HALL EFFECT; HYDROGEN; MAGNETIC FIELD EFFECTS; ZINC; ZINC OXIDE;

ACTIVATION ENERGY;

EID: 43149124990     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200776826     Document Type: Conference Paper

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