Barrier properties of TiN/TiSi2 bilayers formed by two-step rapid thermal conversion process for Cu diffusion barrier

Thin Solid Films

Volumn 347, Issue 1-2, 1999, Pages 214-219

  Kim, Youn Tae ^a   Jun, Chi Hoon ^a   Kim, Dae Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; MULTILAYERS; NITRIDES; RAPID THERMAL ANNEALING; SILICON; SINGLE CRYSTALS; TITANIUM; TITANIUM NITRIDE;

BARRIER PROPERTIES; THERMAL CONVERSION;

THIN FILMS;

EID: 0344462734     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00040-1     Document Type: Article

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