Effects of two-step growth by employing Zn-rich and O-rich growth conditions on properties of (112̄0) ZnO films grown by plasma-assisted molecular beam epitaxy on sapphire

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1635-1640

  Han, Seok Kyu ^a   Kim, Jae Goo ^a   Kim, Jung Hyun ^a   Hong, Soon Ku ^a   Lee, Jae Wook ^b   Lee, Jeong Yong ^b   Song, Jung Hoon ^c   Nam, Yoon Sung ^d   Chang, Soo Kyung ^d   Yao, Takafumi ^e  

^a Chungnam National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Kongju National University   (South Korea)

^d Yonsei University   (South Korea)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SAPPHIRE; ZINC; ZINC OXIDE;

A-PLANE; CRYSTAL QUALITIES; GROWTH CONDITIONS; PLANE SAPPHIRE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RICH CONDITIONS; RMS ROUGHNESS; ROOT MEAN SQUARE ROUGHNESS; SECOND LAYER; SINGLE-STEP; STRUCTURAL AND OPTICAL PROPERTIES; TWO-STEP GROWTH; X RAY ROCKING CURVE; ZNO FILMS;

OPTICAL PROPERTIES;

EID: 77952663302     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3130153     Document Type: Conference Paper

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