Nonpolar a-plane ZnO films grown on GaN/sapphire templates with SiN x interlayer by pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 43, Issue 14, 2010, Pages

  Han, Xiangyun ^a   Gao, Yihua ^a   Dai, Jiangnan ^a   Yu, Chenhui ^a   Wu, Zhihao ^a   Chen, Changqing ^a   Fang, Guojia ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; A-PLANE GAN; EMISSION PEAKS; GAN/SAPPHIRE; IN-PLANE; IN-SITU; LATTICE-MATCHED; NEUTRAL DONOR; NON-POLAR; PHONON MODE; PHONON REPLICA; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; PULSED LASER; RECIPROCAL LATTICE POINTS; RECIPROCAL SPACE MAPPING; RESONANT RAMAN; TEMPERATURE DEPENDENT; ZNO; ZNO FILMS;

EXCITONS; GALLIUM NITRIDE; MAPPING; METALLIC FILMS; PHONONS; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SILICON NITRIDE; SULFUR COMPOUNDS; TENSILE STRAIN; ZINC OXIDE;

PULSED LASERS;

EID: 77949896837     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/14/145102     Document Type: Article

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