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Volumn 22, Issue 23, 2011, Pages

Focused-ion-beam-inflicted surface amorphization and gallium implantation-new insights and removal by focused-electron-beam-induced etching

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DAMAGE; CRYSTALLINE SILICONS; CRYSTALLINITIES; DAMAGE-FREE; ETCH STOP; FLUENCES; MASK LESS; MOLECULAR CHLORINE; NON DESTRUCTIVE; POTENTIAL METHODS; SURFACE AMORPHIZATION; TEM ANALYSIS; TEM SAMPLE PREPARATION; TOPDOWN;

EID: 79954604724     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/23/235302     Document Type: Article
Times cited : (25)

References (27)
  • 23
    • 79954603945 scopus 로고    scopus 로고
    • Ion Implantation Science and Technology. S
    • Ziegler J F 1996 Ion Implantation Science and Technology. S Radiation Damage of Silicon ed K Jones, J Gyulai, L Romano, N G Rudawski and P Petrik pp261-93
    • (1996) Radiation Damage of Silicon , pp. 261-293
    • Ziegler, J.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.