Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

Scripta Materialia

Volumn 64, Issue 12, 2011, Pages 1141-1144

  Buchholt, Kristina ^a   Eklund, Per ^a   Jensen, Jens ^a   Lu, Jun ^a   Spetz, Anita Lloyd ^a   Hultman, Lars ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Atomic force microscopy (AFM); Crystal structure; Helium ion microscopy (HIM); Sputtering; Transmission electron microscopy (TEM)

Indexed keywords

CONTRAST VARIATION; ELASTIC RECOIL DETECTION ANALYSIS; GROWTH CONDITIONS; HELIUM ION; HELIUM ION MICROSCOPY (HIM); NANOLAMINATE; SIC(0 0 0 1); STEP-FLOW GROWTH; STOICHIOMETRIC GROWTH;

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; HELIUM; ION MICROSCOPES; IONS; LANDFORMS; SILICON CARBIDE; SILICON WAFERS; SOIL CONSERVATION; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79954596936     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2011.03.013     Document Type: Article

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