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Applied Physics Letters

Volumn 98, Issue 4, 2011, Pages

Ohmic contact properties of magnetron sputtered Ti3SiC 2 on n- and p-type 4H-silicon carbide

(8) Buchholt, K a Ghandi, R b Domeij, M b Zetterling, C M b Lu, J a Eklund, P a Hultman, L a Spetz, A Lloyd a

a LINKÖPING UNIVERSITY (Sweden)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; AS-DEPOSITED FILMS; CONTACT PROPERTIES; LINEAR TRANSMISSION; P-TYPE; SPECIFIC CONTACT RESISTANCES; ULTRA-HIGH-VACUUM SYSTEMS;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551650146 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3549198 Document Type: Article

Times cited : (67)

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