Characterization of chemically deposited ZnSe/SnO 2 /glass films: Influence of annealing in Ar atmosphere on physical properties

Applied Surface Science

Volumn 257, Issue 15, 2011, Pages 6474-6480

  Metin, H ^a   Durmus S ^b   Erat, S ^a   Ari, M ^b  

^a MERSIN UNIVERSITY   (Turkey)

^b ERCIYES UNIVERSITY   (Turkey)

Author keywords

Electrical properties; Optical properties; ZnSe

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; ARGON; CRYSTALLITE SIZE; DEPOSITION; ELECTRIC PROPERTIES; ENERGY DISPERSIVE X RAY ANALYSIS; ENERGY GAP; II-VI SEMICONDUCTORS; LIGHT ABSORPTION; OPTICAL PROPERTIES; SELENIUM COMPOUNDS; SEMICONDUCTING FILMS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC SELENIDE;

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; CHEMICAL-BATH DEPOSITION; DISLOCATION DENSITIES; ENERGY DISPERSIVE XRAY ANALYSES (EDAX); FOUR-POINT PROBE TECHNIQUES; OPTICAL AND ELECTRICAL PROPERTIES; TEMPERATURE DEPENDENT;

ATMOSPHERIC TEMPERATURE;

EID: 79954582396     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.02.047     Document Type: Article

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