Comparative study of zinc selenide photoelectrode annealed at different temperatures

Solid State Sciences

Volumn 10, Issue 12, 2008, Pages 1970-1975

  Hankare, P P ^a   Chate, P A ^b   Sathe, D J ^a   Asabe, M R ^a   Jadhav, B V ^a  

^a SHIVAJI UNIVERSITY   (India)

^b JSM College   (India)

Author keywords

Annealed photoelectrode; Barrier height; Chemical bath deposition; Flat band potential; Photoelectrochemical cell

Indexed keywords

CELLS; CYTOLOGY; DEPOSITION; EFFICIENCY; II-VI SEMICONDUCTORS; OPEN CIRCUIT VOLTAGE; PHOTOELECTROCHEMICAL CELLS; SODIUM HYDROXIDE; SODIUM SULFIDE; TEMPERATURE DISTRIBUTION; ZINC SELENIDE;

ANNEALED PHOTOELECTRODE; BARRIER HEIGHTS; CHEMICAL BATH DEPOSITION METHODS; CHEMICAL-BATH DEPOSITION; FLAT BAND POTENTIAL; PERFORMANCE PARAMETERS; REVERSE-SATURATION CURRENTS; TEMPERATURE DEPENDENCE;

ANNEALING;

EID: 56949099750     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2008.03.001     Document Type: Article

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