Semiconducting thin films of zinc selenide quantum dots

Journal of Solid State Chemistry

Volumn 177, Issue 12, 2004, Pages 4785-4799

  Pejova, Biljana ^a   Tanuševski, Atanas ^b   Grozdanov, Ivan ^a  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

Activation energy; Band gap energy; Effective mass approximation; Quantum dots; Quantum size effects; Spin orbit splitting; Thin films; Zinc selenide

Indexed keywords

ANNEALING; APPROXIMATION THEORY; CHARACTERIZATION; LATTICE CONSTANTS; MATHEMATICAL MODELS; PERMITTIVITY; THIN FILMS; ULTRAVIOLET SPECTROSCOPY; ZINC COMPOUNDS;

BAND GAP ENERGY; BAND-TO-BAND TRANSITIONS; CRYSTAL SIZE; ELECTRONIC TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

SELENIDE; UNCLASSIFIED DRUG; ZINC SELENIDE;

ACCELERATION; ARTICLE; CALCULATION; CONDUCTANCE; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DIELECTRIC CONSTANT; DONOR; ELECTRON; ENERGY; EVOLUTION; FILM; IONIZATION; MATERIALS; OBSERVATION; PHASE TRANSITION; PREDICTION; QUANTUM CHEMISTRY; SEMICONDUCTOR; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS; ULTRAVIOLET SPECTROSCOPY;

EID: 10644221277     PISSN: 00224596     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jssc.2004.06.011     Document Type: Article

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