Progress in rectifying-based RRAM passive crossbar array

Science China Technological Sciences

Volumn 54, Issue 4, 2011, Pages 811-818

  Zhang, Kangwei ^a   Long, Shibing ^a   Liu, Qi ^a   Lü, Hangbing ^a   Li, Yingtao ^a   Wang, Yan ^a   Lian, Wentai ^a   Wang, Ming ^a   Zhang, Sen ^a   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

1D1R; passive crossbar array; rectification; RRAM; self rectifying

Indexed keywords

CROSSTALK; RESISTORS; TESTING;

1D1R; COMMERCIAL APPLICATIONS; CROSSBAR ARRAYS; DEVELOPMENT AND APPLICATIONS; FUTURE RESEARCH DIRECTIONS; RECTIFICATION; RESISTIVE RANDOM ACCESS MEMORY (RRAM); SELF-RECTIFYING;

RRAM;

EID: 79954578978     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-010-4240-9     Document Type: Article

References (37)

1. Tehrani S. Status and outlook of MRAM memory technology (Invited). IEDM Tech Dig, San Francisco, USA, 2006
2. Koh G H, Hwang Y N, Lee S H, et al. PRAM process technology. Int Conf Integrated Circuit Design Technol, Austin, Texax, 2004
3. S. T. Hsu T. K. Li N. Awaya 2007 Resistance random acess memory switching mechanism J Appl Phys 101 02451 7
4. Zhuang W W, Pan W, Ulrich B D, et al. Novell colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM). IEDM Tech Dig, San Francisco, USA, 2002
5. J. C. Scott 2004 Is there an immortal memory? Science 304 62 63 10.1126/science.1095520 (Pubitemid 38451454)
6. Lee M J, Park Y, Kang B S, et al. 2-stack ID-IR cross-point structure with oxide diodes as switch elements for high density resistance RAM applications. IEDM Tech Dig, Washington D C, USA, 2007
7. Chen Y C, Chen C F, Chen C T, et al. An access-transistor-free (0T/lR) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device. IEDM Tech Dig, Washington D C, USA, 2003
8. Chen A, Haddad S, Wu Y C, et al. Non-volatile resistive switching for advanced memory applications. IEDM Tech Dig, Washington D C, USA, 2005
9. 2 ReRAM cell with CMOS compatible logic process. IEDM Tech Dig, San Francisco, USA, 2010
10. Servalli G. A 45 nm generation phase change memory technology. IEDM Tech Dig, 2009, 113-116
11. M. J. Lee Y. Park D. S. Suh, et al. 2007 Two series oxide resistors applicable to high speed and high density nonvolatile memory Adv Mater 19 3919 3923 10.1002/adma.200700251 (Pubitemid 350190438)
12. Baek I G, Kim D C, Lee M J, et al. Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application. IEDM Tech Dig, Washington D C, USA, 2005
13. G. S. Rose Y. X. Yao J. M. Tour, et al. 2007 Designing CMOS/molecular memories while considering device parameter variations ACM J Emerging Technol Comput Syst 3 1 24 10.1145/1229175.1229176 (Pubitemid 46662851)
14. M. J. Lee S. Seo D. C. Kim, et al. 2007 A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories Adv Mater 19 73 76 10.1002/adma.200601025 (Pubitemid 46144812)
15. 2 resistive switching memory array Appl Phys Lett 92 162904 10.1063/1.2912531 (Pubitemid 351590725)
16. x thin-film diodes for cross-point memory applications Adv Mater 20 3066 3069 10.1002/adma.200702932
17. Q. Y. Zuo S. B. Long Q. Liu, et al. 2009 Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory J Appl Phys 106 073724 10.1063/1.3236632
18. D. S. Golubović A. H. Miranda N. Akil, et al. 2007 Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories Microel Eng 84 2921 2926 10.1016/j.mee.2007.03.009 (Pubitemid 350116286)
19. B. Cho T. W. Kim S. Song, et al. 2009 Rewritable switching of one diode-one resistor nonvolatile organic memory devices Adv Mater 21 1228 1232
20. x diode IEEE Electron Device Lett 30 550 552 10.1109/LED.2009.2016582
21. x/Pt trilayer Appl Phys Lett 92 043510 10.1063/1.2838350 (Pubitemid 351198896)
22. Tallarida G, Huby N, Kutrzeba-Kotowska B, et al. Low temperature rectifying junctions for crossbar non-volatile memory devices. IEEE IMW Tech Dig, Costa, Mesa, 2009
23. E. Y. H. Teo C. Zhang S. L. Lim, et al. 2009 An organic-based diodememory device with rectifying property for crossbar memory array applications IEEE Electron Device Lett 30 487 489 10.1109/LED.2009.2033735
24. E. Katsia N. Huby G. Tallarida, et al. 2009 Poly (3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications Appl Phys Lett 4 143501 10.1063/1.3114442
25. 2/Pt oxide diode Appl Phys Lett 96 262901 10.1063/1.3457866
26. J. C. Zhou H. B. L. Y. Z. Chen 2008 Nanoscale Ta-based diffusion barrier thin-films and their resistance properties Sci China Ser E-Tech Sci 51 1017 1023 10.1007/s11431-008-0089-6
27. 2/Ti schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays Nanotechnol 21 195201 10.1088/0957-4484/21/19/195201
28. x thin-film diodes Appl Phys Lett 72 1584 1586 10.1063/1.121122 (Pubitemid 128671397)
29. L. S. Roman M. Berggren O. Inganäs 1999 Polymer diodes with high rectification Appl Phys Lett 75 3557 3559 10.1063/1.125387 (Pubitemid 129564712)
30. E. Katsia G. Tallarida B. Kutrzeba-Kotowska, et al. 2008 Integration of organic based schottky junctions into crossbar arrays by standard UV lithography Org Electron 9 1044 1050 10.1016/j.orgel.2008.08.010
31. 5 solid electrolyte grown on a Si substrate Microel Eng 85 1736 1738 10.1016/j.mee.2008.04.028
32. Y. J. Dong G. H. Yu C. Michael, et al. 2008 Si/a-Si core/shell nanowires as nonvolatile crossbar switches Nano Lett 8 386 391 10.1021/nl073224p (Pubitemid 351345987)
33. S. H. Jo W. Lu 2008 CMOS compatible nanoscale nonvolatile resistance switching memory Nano Lett 8 392 397 10.1021/nl073225h (Pubitemid 351345988)
34. 2-based memory cell with a self-rectifying effect for crossbar WORM memory application IEEE Electron Device Lett 31 344 346 10.1109/LED.2009.2039849
35. K. H. Kim S. H. Jo S. Gaba, et al. 2010 Nanoscale resistive memory with intrinsic diode characteristics and long endurance Appl Phys Lett 96 053106 10.1063/1.3294625
36. S. H. Jo K. H. Kim W. Lu 2009 High-density crossbar arrays based on a Si memristive system Nano Lett 9 870 874 10.1021/nl8037689
37. Q. Y. Zuo M. Liu S. B. Long, et al. 2009 Progress in resistive random access memory and its integration technology Mircroelectron 39 546 551