PRAM process technology

2004 International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2004, Pages 53-57

  Koh, G H ^a   Hwang, Y N ^a   Lee, S H ^a   Lee, S Y ^a   Ryoo, K C ^a   Park, J H ^a   Song, Y J ^a   Ahn, S J ^a   Jeong, C W ^a   Yeung, F ^a   Kim, Y T ^b   Park, J B ^c   Jeong, G T ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a Advanced Technology Development   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SOFTWARE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; LOGIC PROGRAMMING; PROBLEM SOLVING; SEMICONDUCTOR MATERIALS; TRANSISTORS;

CURRENT REDUCTION; LOGIC PROCESSING CHIPS; MEMORY ELEMENTS; PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM);

RANDOM ACCESS STORAGE;

EID: 4143127826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Lai and T. Lowrey, "OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications", IEDM 2001, pp 243-248.
2. S. Lai "Current Status of the Phase Change Memory and its Future", IEDM 2003, pp255-258.
3. Tyler A. Lowery et al., "Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications", MRS Fall 2003, HH2.1
4. H. Horii et al., " A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM", VLSI 2003, pp. 177-178.
5. W.Y. Cho et al., "A 0.18 μm 3.0V 64Mb Non-volatile Phase-transition Random Access Memory (PRAM)", ISSCC 2004.