Group III-nitride semiconductor Schottky barrier photodiodes for radiometric use in the UV and VUV regions

Metrologia

Volumn 46, Issue 4, 2009, Pages

  Saito, Terubumi ^a   Hitora, Toshimi ^b,c   Ishihara, Hideaki ^d   Matsuoka, Mikihiko ^d   Hitora, Hisako ^b   Kawai, Hiroji ^e   Saito, Ichiro ^a   Yamaguchi, Eiichi ^b,c,e  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ALGAN KK   (Japan)

^c DOSHISHA UNIVERSITY   (Japan)

^d Iwasaki Electric Co Ltd   (Japan)

^e POWDEC K K   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ANGULAR RESPONSE; CUTOFF WAVELENGTHS; GROUP III; INTERNAL QUANTUM EFFICIENCY; PRECISE MEASUREMENTS; RADIANT EXPOSURE; REJECTION RATIOS; RESPONSIVITY; SCHOTTKY-BARRIER PHOTODIODE; SI PHOTODIODES; SPECTRAL RESPONSIVITY; TEMPERATURE DEPENDENCE; UV REGION; UV- AND;

ALUMINUM; GALLIUM ALLOYS; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

PHOTODIODES;

EID: 67650701396     PISSN: 00261394     EISSN: 16817575     Source Type: Journal    
DOI: 10.1088/0026-1394/46/4/S26     Document Type: Article

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