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Review of Scientific Instruments

Volumn 80, Issue 9, 2009, Pages

Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

(6) Barkusky, Frank a Peth, Christian a Bayer, Armin a Mann, Klaus a John, Joachim b Malinowski, Pawel E b

a LASER LABORATORIUM GÖTTINGEN E V (Germany)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

13.5 NM; ALGAN; ALGAN LAYERS; AU ELECTRODES; DEGRADATION TEST; EXTREME ULTRAVIOLETS; EXTREME-ULTRAVIOLET RADIATION SOURCES; FLUENCES; LINEAR RESPONSE; METALORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOEFFECT; RESPONSIVITY; SCHOTTKY; SCHWARZSCHILD OBJECTIVE; SI (1 1 1); SILICON-BASED; TABLE-TOP; XENON PLASMA;

ALUMINA; ALUMINUM GALLIUM NITRIDE; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; PHOTODIODES; PLASMA DIODES; QUANTUM OPTICS; RADIATION DAMAGE; RADIATION DETECTORS; SEMICONDUCTING GALLIUM; SILICON WAFERS; ULTRAVIOLET DEVICES; XENON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349694304 PISSN: 00346748 EISSN: None Source Type: Journal
DOI: 10.1063/1.3212666 Document Type: Article

Times cited : (8)

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