Recent developments of wide-bandgap semiconductor based UV sensors

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 860-864

  BenMoussa, A ^a   Soltani, A ^b   Schuhle U ^c   Haenen, K ^d   Chong, Y M ^e   Zhang, W J ^e   Dahal, R ^f   Lin, J Y ^f,g   Jiang, H X ^f,g   Barkad, H A ^b   BenMoussa, B ^d   Bolsee, D ^h   Hermans, C ^h   Kroth, U ⁱ   Laubis, C ⁱ   Mortet, V ^d   De Jaeger, J C ^b   Giordanengo, B ^a   Richter, M ⁱ   Scholze, F ⁱ   Hochedez, J F ^a   more..

^a ROYAL OBSERVATORY OF BELGIUM   (Belgium)

^b INSTITUT D ELECTRONIQUE   (France)

^c MAX PLANCK INSTITUT FÜR SONNENSYSTEMFORSCHUNG   (Germany)

^d HASSELT UNIVERSITY   (Belgium)

^e CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^f KANSAS STATE UNIVERSITY   (United States)

^g Department of Electrical and Computer Engineering   (United States)

^h BELGIAN INSTITUTE FOR SPACE AERONOMY   (Belgium)

ⁱ PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

MSM; Solarblind; UV photodetector; WBGM

Indexed keywords

ALN; ALUMINIUM NITRIDE; CUBIC BORON NITRIDE (CBN); FOUR-ORDER; FUTURE MISSION; HIGH BREAKDOWN VOLTAGE; METAL SEMICONDUCTOR METAL; MSM; MSM PHOTODETECTOR; REJECTION RATIOS; RESPONSIVITY; SOLAR RESEARCH; SOLAR-BLIND PHOTODETECTORS; SOLARBLIND; SPACE ASTRONOMY; UV IRRADIATION; UV PHOTODETECTOR; UV SENSOR; UV- AND; VACUUM ULTRAVIOLETS; VUV RADIATION; WAVELENGTH RANGES; WBGM; WIDE BAND-GAP MATERIAL; WIDE-BAND-GAP SEMICONDUCTOR; WURTZITE;

ALUMINUM COMPOUNDS; BORON; BORON NITRIDE; CUBIC BORON NITRIDE; CURRENT VOLTAGE CHARACTERISTICS; DIAMONDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; NITRIDES; OPTOELECTRONIC DEVICES; SENSORS; ZINC SULFIDE;

PHOTODETECTORS;

EID: 67349263464     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.11.013     Document Type: Article

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