Excited states and optical absorption of small semiconducting clusters: Dopants, defects and charging

Chemical Science

Volumn 2, Issue 3, 2011, Pages 400-406

  Fischer, Sean A ^a   Isborn, Christine M ^b   Prezhdo, Oleg V ^c  

^a UNIVERSITY OF WASHINGTON   (United States)

^b STANFORD UNIVERSITY   (United States)

^c UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB-INITIO ELECTRONIC STRUCTURE CALCULATIONS; BLUE SHIFT; EXCITATION DYNAMICS; EXCITATION PROPERTIES; EXCITED-STATE PROPERTIES; INTRABAND TRANSITIONS; LOCAL BONDING; OPTICAL ABSORPTION; OPTICAL ABSORPTION SPECTRUM; SURFACE DANGLING BONDS;

ABSORPTION; CALCULATIONS; ELECTRIC EXCITATION; ELECTRONIC STRUCTURE; EXCITED STATES; LIGHT ABSORPTION; MATERIALS PROPERTIES; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SURFACE DEFECTS;

DANGLING BONDS;

EID: 79954489164     PISSN: 20416520     EISSN: 20416539     Source Type: Journal    
DOI: 10.1039/c0sc00626b     Document Type: Article

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