Carrier multiplication in semiconductor nanocrystals: theoretical sereerring of candidate materials based on band-structure effects

Nano Letters

Volumn 8, Issue 10, 2008, Pages 3174-3181

  Luo, Jun Wei ^a   Franceschetti, Alberto ^a   Zunger, Alex ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGES; BAND STRUCTURE EFFECTS; BIEXCITON; BIEXCITON STATE; CANDIDATE MATERIALS; CARRIER MULTIPLICATIONS; CRITICAL ENERGIES; CRYSTAL APPROXIMATIONS; DENSITY OF STATE; DIFFERENT SIZES; DOT SIZES; ELECTRON HOLES; ELECTRON-HOLE PAIRS; ELECTRONIC STRUCTURE CALCULATIONS; ENERGY LEVELS; EXCESS ENERGIES; EXCITED ELECTRONS; EXCITON DENSITIES; FIGURE OF MERITS; GAAS; INAS; INP; INP NANOCRYSTALS; INTERIOR STATE; PBSE NANOCRYSTALS; QUANTUM-CONFINEMENT EFFECTS; SEMICONDUCTOR NANOCRYSTALS; STRUCTURE EFFECTS; SURFACE EFFECTS;

BAND STRUCTURE; CADMIUM ALLOYS; CADMIUM COMPOUNDS; COULOMB INTERACTIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; EXCITONS; GALLIUM ALLOYS; GERMANIUM; IMPACT IONIZATION; INDIUM ARSENIDE; LASER PULSES; NANOCRYSTALS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS;

CRYSTAL STRUCTURE;

NANOPARTICLE;

ARTICLE; CHEMISTRY; ELECTRON; ELECTRONICS; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; STATISTICAL MODEL;

ELECTRONICS; ELECTRONS; MODELS, STATISTICAL; NANOPARTICLES; NANOTECHNOLOGY; SEMICONDUCTORS;

EID: 56149084589     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801459h     Document Type: Article

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