On the absence of detectable carrier multiplication in a transient absorption study of InAs/CdSe/ZnSe core/shelm/shell2 quantum dots

Nano Letters

Volumn 8, Issue 4, 2008, Pages 1207-1211

  Ben Lulu, Meirav ^a   Mocatta, David ^a   Bonn, Mischa ^b   Banin, Uri ^a   Ruhman, Sanford ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b FOM INSTITUTE AMOLF   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; LASER PULSES; NANOCRYSTALS; SEMICONDUCTING INDIUM;

BAND GAPS; BAND-EDGE ABSORPTIONS; CARRIER MULTIPLICATIONS; CROSS SECTIONS; EXPERIMENTAL CONDITIONS; FEMTOSECOND PUMPS; NANOCRYSTAL QUANTUM DOTS; NEAR-IR; PROBE MEASUREMENTS; QUANTUM DOTS; TRANSIENT ABSORPTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 45149116885     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl080199u     Document Type: Article

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