Impact ionization can explain carrier multiplication in PbSe quantum dots

Nano Letters

Volumn 6, Issue 10, 2006, Pages 2191-2195

  Franceschetti, A ^a   An, J M ^a   Zunger, A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MULTIPLICATION; COULOMB INTERACTIONS; ELECTRON HOLE PAIRS; ENERGY THRESHOLD;

COULOMB BLOCKADE; ENERGY GAP; EXCITONS; IMPACT IONIZATION; LEAD COMPOUNDS; PHOTONS;

SEMICONDUCTOR QUANTUM DOTS;

ION; LEAD; LEAD SELENIDE; QUANTUM DOT; SELENIUM DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; INSTRUMENTATION; LIGHT; METHODOLOGY; NANOTECHNOLOGY; POWER SUPPLY; RADIATION EXPOSURE;

COMPUTER SIMULATION; ELECTRIC POWER SUPPLIES; IONS; LEAD; LIGHT; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOTECHNOLOGY; QUANTUM DOTS; SELENIUM COMPOUNDS;

EID: 33750515013     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0612401     Document Type: Article

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