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Volumn 79, Issue 26, 1997, Pages 5282-5285

Charged excitons in self-assembled semiconductor quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONS; EXCITONS; LIGHT ABSORPTION; LIGHT TRANSMISSION; OPTICAL PROPERTIES; PERTURBATION TECHNIQUES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSPORT PROPERTIES;

EID: 0031360386     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.79.5282     Document Type: Article
Times cited : (300)

References (22)
  • 10
  • 15
    • 35949006028 scopus 로고
    • W. Que, Phys. Rev. B, 45, 11 036 (1992).
    • (1992) Phys. Rev. B , vol.45 , Issue.11 , pp. 36
    • Que, W.1
  • 17
    • 85035211037 scopus 로고    scopus 로고
    • unpublished
    • K. H. Schmidt et al., (unpublished).
    • Schmidt, K.H.1
  • 21
    • 85035229632 scopus 로고    scopus 로고
    • C. A. J. Ammerlaan and B. Pajot, World Scientific, Singapore
    • A. B. Dzyubenko, in Shallow-Level Centers in Semiconductors, C. A. J. Ammerlaan and B. Pajot (World Scientific, Singapore, 1997), p. 81.
    • (1997) Shallow-Level Centers in Semiconductors , pp. 81
    • Dzyubenko, A.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.