In spite of recent doubts carrier multiplication does occur in pbse nanocrystals

Nano Letters

Volumn 8, Issue 6, 2008, Pages 1713-1718

  Trinh, M Tuan ^a   Houtepen, Arjan J ^a   Schins, Juleon M ^a   Hanrath, Tobias ^b   Piris, Jorge ^a   Knulst, Walter ^a   Goossens, Albert P L M ^a   Siebbeles, Laurens D A ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SEMICONDUCTORS; CARRIER MULTIPLICATION EFFICIENCIES; CARRIER MULTIPLICATIONS; CDTE; FEMTOSECOND TRANSIENTS; INAS; INAS NANOCRYSTALS; PBSE NANOCRYSTALS; PBTE; SEMICONDUCTOR NANOCRYSTALS;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; INDIUM ARSENIDE; LASER PULSES; PHOTOBLEACHING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

NANOCRYSTALS;

LEAD; LEAD SELENIDE; NANOMATERIAL; SELENIUM DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRON TRANSPORT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRON TRANSPORT; LEAD; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SELENIUM COMPOUNDS; SURFACE PROPERTIES;

EID: 48449106916     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0807225     Document Type: Article

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