Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 4, 2011, Pages 769-776

  Berger, Bastian ^a   Schüler, Nadine ^b   Anger, Sabrina ^b   Gründig Wendrock, Bianca ^c   Niklas, Jürgen R ^b   Dornich, Kay ^b  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b Freiberg Instruments GmbH   (Germany)

^c Solar World Innovations GmbH   (Germany)

Author keywords

defects; electrical characterization; lifetime; MDP

Indexed keywords

CONTACT LESS; ELECTRICAL CHARACTERIZATION; ELECTRICAL DEFECTS; ELECTRICAL PROPERTY; HIGH SPATIAL RESOLUTION; IN-LINE MEASUREMENTS; LIFETIME; MDP; MEASUREMENT SPEED; NUMERICAL TOOLS; PHOTO-INDUCED CURRENT TRANSIENT SPECTROSCOPIES; PRODUCTION SPEED; TEMPERATURE-DEPENDENT MEASUREMENTS; TRAP LEVELS;

ACTIVATION ENERGY; DEFECTS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; INDIUM ARSENIDE; INDIUM PHOSPHIDE; POWER QUALITY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79954447930     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201083994     Document Type: Article

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