Contact-less electrical defect characterisation of silicon by MD-PICTS

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 241-245

  Dornich, K ^a   Niemietz, K ^a   Wagner, Mt ^a   Niklas, J R ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Defect levels; Epi; Lifetime; MD PICTS; MDP; Silicon; Thermal donor

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC PROPERTIES; OPTICAL RESOLVING POWER; SENSITIVITY ANALYSIS; SILICON WAFERS; SPECTROSCOPIC ANALYSIS;

DEFECT LEVELS; EPI; LIFETIME; MD-PICTS; MDP; THERMAL DONOR;

SILICON;

EID: 33744546274     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.040     Document Type: Article

References (5)

1. Dornich K., Gründig-Wendrock B., Hahn T., and Niklas J.R. Adv Eng Mater 6 7 (2004) 598-602
2. Dornich K., Hahn T., and Niklas J.R. Freiberg Forschungsh B 327 (2004)
3. Dornich K., Hahn T., and Niklas J.R. In: Proceeding of the MRS spring meeting, 864 (2005) 549-554
4. Borghesi A., Pivac B., Sassalla A., and Stella A. Appl Phys Rev 9 (1995) 4169
5. Gruendig-Wendrock B., and Niklas J.R. Phys status solidi 3 (2003) 885-888