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Volumn 864, Issue , 2005, Pages 573-578

Contact free defect investigation in as grown Fe-doped SI-InP

Author keywords

Defects; InP; MD PICTS; MDP

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DOPING (ADDITIVES); INDIUM COMPOUNDS; IRON; MICROWAVES;

EID: 30544434925     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-864-e9.21     Document Type: Conference Paper
Times cited : (2)

References (17)
  • 1
    • 0009979451 scopus 로고
    • Properties of Indium Phosphide
    • INSPEC, London, UK
    • Properties of Indium Phosphide, Emis Datareview Series No 6, INSPEC, London, UK (1991)
    • (1991) Emis Datareview Series No 6 , vol.6
  • 16
    • 30544432397 scopus 로고    scopus 로고
    • B. Gründig-Wendrock, A. Wohlrab, K. Dornich, T. Hahn, J. R. Niklas, will be published
    • B. Gründig-Wendrock, A. Wohlrab, K. Dornich, T. Hahn, J. R. Niklas, will be published


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.