Defect specific topography of GaAs wafers by microwave-detected photo induced current transient spectroscopy

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 371-375

  Grundig Wendrock B ^a   Jurisch, M ^b   Niklas, J R ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

Contactless; Microwave absorption; Photoconductivity; PICTS; Si GaAs; SI gallium arsenide

Indexed keywords

CRYSTAL DEFECTS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SPECTROSCOPY; SUBSTRATES;

MICROWAVE ABSORPTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037197511     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01073-X     Document Type: Conference Paper

References (9)