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Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 405-408

Contact-less electrical defect characterization of semi-insulating 6H-SiC bulk material

(8) Hahn, S a Beyer, F C b Gallstrom A b Carlsson, P b Henry, A b Magnusson, B c Niklas, J R a Janzen E b

a TU BERGAKADEMIE FREIBERG (Germany)

b LINKÖPING UNIVERSITY (Sweden)

c Norstel AB (Sweden)

Author keywords

C Si ratios; Contact less electrical characterization; Defect levels; MD PICTS; Semi insulating 6H SiC

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; INSULATION; TEMPERATURE;

C/SI RATIO; CONTACT LESS; CONTACT-LESS ELECTRICAL CHARACTERIZATION; DEFECT LEVELS; ELECTRICAL CHARACTERIZATION; ELECTRICAL DEFECTS; MICROWAVE DETECTED PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY; PHOTO-INDUCED CURRENT TRANSIENT SPECTROSCOPIES; SEMI-INSULATING; SEMI-INSULATING 6H-SIC;

SILICON CARBIDE;

EID: 63849197483 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.600-603.405 Document Type: Conference Paper

Times cited : (3)

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