Versatile simulation tool and novel measurement method for electrical characterization of semiconductors

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 241-246

  Schuler N ^a   Hahn, T ^b   Dornich, K ^a   Niklas, J R ^a  

^a Freiberg Instruments GmbH   (Germany)

^b TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Cross over point; Iron; MDP; Minority carrier lifetime; Silicon; Trapping; PCD

Indexed keywords

CARRIER LIFETIME; DEFECTS; ELECTRIC PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; TOOLS; IRON; SILICON;

CONTACT LESS; CROSS-OVER; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; IRON DETERMINATION; LOW LEVEL; MEASUREMENT CONDITIONS; MEASUREMENT METHODS; MINORITY CARRIER LIFETIMES; NUMERICAL TOOLS; SI WAFER; SIMULATION TOOL; STEADY STATE SOLUTION; STEADY-STATE MEASUREMENTS; TRAP DENSITY; TRAPPING EFFECTS; CROSS OVER; TRAPPING;

MEASUREMENTS; SILICON WAFERS;

EID: 75849156577     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.241     Document Type: Conference Paper

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