High-performance local back gate thin-film field-effect transistors using sorted carbon nanotubes on an amino-silane treated hafnium oxide surface

Semiconductor Science and Technology

Volumn 26, Issue 7, 2011, Pages

  Narasimhamurthy, K C ^a   Paily, Roy ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMINOSILANES; BACK GATES; BACKGATE VOLTAGE; GATE OXIDE; HIGH-DENSITY; HIGH-K DIELECTRIC MATERIALS; LOW VOLTAGE OPERATION; MAXIMUM CURRENT DENSITY; MOBILITY VALUE; OFF CURRENT; OUTPUT CHARACTERISTICS; P-TYPE; SATURATION REGION; SEMI-CONDUCTING NANOTUBES; SUBTHRESHOLD; TRANSISTOR SWITCHING; WAFER SCALE FABRICATION;

CARBON NANOTUBES; CARRIER MOBILITY; DEPOSITION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM OXIDES; MOS DEVICES; OXIDES; SINGLE-WALLED CARBON NANOTUBES (SWCN); SURFACES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

THIN FILM TRANSISTORS;

EID: 79953852904     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/7/075002     Document Type: Article

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