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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 2, 2011, Pages

Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors

(9) Lee, Ki Chang a Jo, Kwang Min a Sung, Sang Yun a Lee, Joon Hyung a Kim, Jeong Joo a Jeong, Byoung Seong b Pearton, S J c Norton, D P c Heo, Young Woo a

a Kyungpook National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; INDIUM; OXYGEN; TIN; TIN OXIDES; ZINC; ZINC OXIDE;

ACTIVE CHANNEL LAYERS; ANNEALING TREATMENTS; CHANNEL LAYERS; CHANNEL MATERIALS; DEVICE CHARACTERISTICS; ELECTRICAL PROPERTY; ENHANCEMENT MODES; FIELD-EFFECT MOBILITIES; LOW TEMPERATURE PROCESSING; OFF CURRENT; OXYGEN PARTIAL PRESSURE; PINCHOFF; POST ANNEALING TREATMENT; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SUBTHRESHOLD SLOPE; TIN-ZINC OXIDES; TRANSPARENT TFTS;

THIN FILM TRANSISTORS;

EID: 79953784228 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3553205 Document Type: Article

Times cited : (7)

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