Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Chakraborty, G ^a   Chattopadhyay, S ^a   Sarkar, C K ^a   Pramanik, C ^b  

^a JADAVPUR UNIVERSITY   (India)

^b INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); NANOCRYSTALLINE SILICON; NANOCRYSTALLITES; PERMITTIVITY; SILICA; VOLUME FRACTION;

FOWLER-NORDHEIM (FN) TUNNELING; SILICON NANOCRYSTALS; TUNNELING CURRENTS;

MOS DEVICES;

EID: 33847766567     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2425290     Document Type: Article

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