Investigation of Auger recombination in Ge and Si nanocrystals embedded in SiO2 matrix

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 1, 2009, Pages 57-62

  Mahdouani, M ^a   Bourguiga, R ^a,b   Jaziri, S ^a,b   Gardelis, S ^c   Nassiopoulou, A G ^c  

^a Laboratoire de Physique des Matériaux Structures et Propriétés   (Tunisia)

^b Struggle and Prevention   (Tunisia)

^c INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Auger recombination; Ge nanocrystals; Silicon nanocrystals

Indexed keywords

AUGER RECOMBINATION; BIEXCITON; COMPLEX STRUCTURE; EFFECTIVE MASS APPROXIMATION; ENVELOPE FUNCTION APPROXIMATIONS; EXCITED ELECTRONS; GE NANOCRYSTALS; HOLE LEVELS; MATRIX; MULTIBAND; QUANTUM DOT; SI NANOCRYSTAL; SILICON NANOCRYSTALS; WIDE BAND GAP;

AUGERS; ELECTRON MOBILITY; GERMANIUM; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON COMPOUNDS; SILICON OXIDES;

NANOCRYSTALS;

EID: 70349959908     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.08.020     Document Type: Article

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