Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayers

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  De Pauli, M ^a,b   Malachias, A ^a   Westfahl Jr , H ^a   Bettini, J ^a   Ramirez, A ^a   Huang, G S ^c,d   Mei, Y F ^c,d   Schmidt, O G ^d  

^a LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c FUDAN UNIVERSITY   (China)

^d IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DEPOSITION PROCESS; DEVICE FABRICATIONS; INTERFACE QUALITY; LOCAL DEFECTS; NANO-METER-SCALE; ROUGHNESS EVOLUTION; STACKING PROCESS; SURFACE MOBILITY; SURFACE QUALITIES; TRANSMISSION ELECTRON; X RAY REFLECTIVITY;

ATOMIC LAYER DEPOSITION; HAFNIUM COMPOUNDS; MULTILAYERS; TRANSMISSION ELECTRON MICROSCOPY;

STACKING FAULTS;

EID: 79953660888     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3555624     Document Type: Article

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