Origin of an absorption band peaked at 5560 cm-1 and related to divacancies in si1-xGex

Semiconductors

Volumn 35, Issue 8, 2001, Pages 890-894

  Pomozov, Yu V ^a   Sosnin, M G ^a   Khirunenko, L I ^a   Abrosimov, N V ^b,c   Schroder W ^c  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035430074     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1393022     Document Type: Article

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