The effects of ultraviolet exposure on the device characteristics of atomic layer deposited-ZnO:N thin film transistors

Journal of the Electrochemical Society

Volumn 158, Issue 5, 2011, Pages

  Kim, Jae Min ^a   Lim, S J ^b   Nam, Taewook ^a   Kim, Doyoung ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ATOMIC LAYER DEPOSITED; BACK-GATE; CURRENT MODULATION; DEVICE CHARACTERISTICS; GATE VOLTAGES; NITROGEN-DOPED; ORDERS OF MAGNITUDE; PASSIVATION LAYER; PINCHOFF; RECOVERY EFFECTS; RESISTIVITY CHANGES; TRANSFER CURVES; ULTRAVIOLET EXPOSURE; ULTRAVIOLET LIGHTS; UV EXPOSURE; UV LIGHT; ZNO;

CARRIER CONCENTRATION; DRAIN CURRENT; PASSIVATION; RECOVERY; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79953168427     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3560191     Document Type: Article

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