Efficient nonvolatile rewritable memories based on three-dimensionally confined Au quantum dots embedded in ultrathin polyimide layers

Japanese Journal of Applied Physics

Volumn 50, Issue 3, 2011, Pages

  Wu, Chaoxing ^a   Li, Fushan ^a   Guo, Tailiang ^a   Qu, Bo ^b   Chen, Zhijian ^b   Gong, Qihuang ^b  

^a FUZHOU UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; BI-STABILITY; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL PROPERTY; NON-VOLATILE; ON/OFF RATIO; OPERATING MECHANISM; ORGANIC BISTABLE DEVICE; POLYIMIDE LAYERS; QUANTUM DOT; QUANTUM DOTS; RETENTION ABILITY; REWRITABLE MEMORY; ROOM TEMPERATURE; ULTRA-THIN;

ELECTRIC PROPERTIES; POLYIMIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79953086631     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.030204     Document Type: Article

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