Memory effect of nonvolatile bistable devices based on CdSeZnS nanoparticles sandwiched between C60 layers

Applied Physics Letters

Volumn 91, Issue 16, 2007, Pages

  Li, Fushan ^a   Son, Dong Ick ^a   Ham, Jung Hun ^a   Kim, Bong Jun ^a   Jung, Jae Hun ^a   Kim, Tae Whan ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; HYSTERESIS; NANOPARTICLES; VOLTAGE MEASUREMENT;

FLATBAND VOLTAGE SHIFTS; MEMORY EFFECTS; MEMORY RETENTION ABILITIES; NONVOLATILE BISTABLE DEVICES;

SHAPE MEMORY EFFECT;

EID: 35548944891     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801357     Document Type: Article

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